(China (Mainland))
Product Summary
The BUT11A is an NPN Silicon Transistor.
Parametrics
BUT11A absolute maximum ratings: (1)Collector-Base Voltage : 1000V; (2)Collector-Emitter Voltage : 450V; (3)Emitter-Base Voltage : 9V; (4)Collector Current (DC) : 5A; (5)Collector Current (Pulse) : 10A; (6)Base Current (DC) : 2A; (7)Base Current (Pulse) : 4 A; (8)Collector Dissipation (TC=25℃) : 100 W; (9)Junction Temperature : 150℃; (10)Storage Temperature : -65 to 150℃.
Features
BUT11A features: (1)Collector-Emitter Sustaining Voltage : 450V; (2)Collector Cut-off Current : 1mA; (3)Emitter Cut-off Current : 10mA; (4)Collector-Emitter Saturation Voltage : 1.5V; (5)Base-Emitter Saturation Voltage : 1.3V; (6)Turn On Time : 1μs; (7)Storage Time : 4μs; (8)Fall Time : 0.8μs.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 BUT11AF |
Other |
|
Data Sheet |
Negotiable |
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BUT11AFTU |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Si Transistor |
Data Sheet |
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BUT11AI |
Other |
|
Data Sheet |
Negotiable |
|
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BUT11APX |
NXP Semiconductors |
Transistors Bipolar (BJT) RAIL PWR-MOS |
Data Sheet |
Negotiable |
|
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BUT11APX,127 |
NXP Semiconductors |
Transistors Bipolar (BJT) RAIL PWR-MOS |
Data Sheet |
Negotiable |
|
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BUT11APX-1200 |
Other |
|
Data Sheet |
Negotiable |
|
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BUT11APX-1200,127 |
NXP Semiconductors |
Transistors Bipolar (BJT) BUT11APX-1200/SOT186A/RAILH// |
Data Sheet |
Negotiable |
|
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 |
BUT11ATU |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Si Transistor |
Data Sheet |
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